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Channel Last Transistor
Technology

A) Bulk MOSFET

  • High channel doping

  • Low mobility and performance

  • High variability and leakage

  • Epitaxial channel MOSFET

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  • Advanced by Suvolta

  • Back diffusion in the epitaxial layer

  • Improved variability 

  • No back diffusion

  • Very low channel doping

  • High mobility and performance

  • Low variability and leakage

FFT advantages compared to Bulk MOSFET

  • Improved performance

  • Improved variability 

  • > 27% at high VD

  • > 65% at low  VD

  • > 35% at effective drive current

  • Reduced leakage

  • 60% reduction in statistical variability

  • Improved reliability

  • Order of magnitude noise reduction

  • Reduced Applicable to PD SOI and FinFET

  • ~ 2 orders of magnitude

  • ~ lower band-to-band tunneling