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CMOS IP: Patent List 

  1. Reduced local threshold voltage variation MOSFET using multiple layers of epi for improved device operation.  Patent number: 11049939

    • Filed: August 2, 2016

    • Date of Patent: June 29, 2021

    • Assignee: SemiWise Limited

    • Inventor: Asen Asenov

  2. Fluctuation resistant FinFET: Patent number: 9847404

    • Filed: September 11, 2013

    • Date of Patent: December 19, 2017

    • Assignees: SemiWise Limited, Semi Solutions LLC

    • Inventors: Robert J. Strain, Asen Asenov

  3. Method of manufacturing variation resistant metal-oxide-semiconductor field effect transistor (MOSFET): Patent number: 9373684

    • Filed: March 20, 2012

    • Date of Patent: June 21, 2016

    • Assignee: SemiWise Limited

    • Inventors: Asen Asenov, Gareth Roy

  4. Fluctuation resistant low access resistance fully depleted SOI transistor with improved channel thickness control and reduced access resistance: Patent number: 9263568

    • Filed: July 25, 2013

    • Date of Patent: February 16, 2016

    • Assignee: SemiWise Limited

    • Inventor: Asen Asenov

  5. Gate recessed FDSOI transistor with sandwich of active and etch control layer: Patent number: 9269804

    • Filed: July 25, 2013

    • Date of Patent: February 23, 2016

    • Assignee: SemiWise Limited

    • Inventor: Asen Asenov

  6. Manufacture of a variation resistant metal-oxide-semiconductor field effect transistor (MOSFET): Patent number: 9312362​

    • Filed: March 20, 2015

    • Date of Patent: April 12, 2016

    • Assignee: SemiWise Limited

    • Inventors: Asen Asenov, Gareth Roy

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